1 p-channel 20 v (d-s) mosfet features ? t renchfet ? power mosfet ?1 0 0 % r g te ste d applications ? pow e r management for portable and consumer - load switches - dc/dc converters notes: a. t c = 2 5 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 175 c/w. product summ ary v ds (v) r ds(on) ( ? ) max. i d (a) a q g (t yp.) - 20 0.0 65 at v gs = - 4.5 v - 4 . 5 13.8 nc 0.090 at v gs = - 2.5 v - 3 . 7 0.1175 at v gs = - 1.8 v - 3 . 3 absolute maximum ratings (t a = 25 c, unless otherwise noted) p a rameter symbol limit u nit dr ain-source voltage v ds - 20 v gat e -source voltage v gs 12 contin uous d rain current (t j = 150 c ) t c = 25 c i d - 4.5 a t c = 70 c - 3.7 t a = 25 c - 3. 5 b, c t a = 70 c - 2. 6 b, c pulsed dr a in current (t = 300 s) i dm - 20 contin uous sou rce-drain diode current t c = 25 c i s - 1.4 t a = 25 c - 1 b, c max i mum power dissipation t c = 25 c p d 1. 7 w t c = 70 c 1. 1 t a = 25 c 1 b, c t a = 70 c 0.6 b, c ope r ating junction and storage temperature range t j , t stg - 55 to 15 0 c solder ing recommendations (peak temperature) d, e 260 thermal resist ance ratings p a ramete r symb ol typical maximum un it maxim um junction-to-ambient b, d t ? 5 s r thj a 100 13 0 c/w maximum junction-to-foot (drain) steady state r thjf 60 75 s g d p-channel mosfet g to-236 (sot -23) s d top v iew 2 3 1 dt s 2 3 1 5 www.din-tek.jp
2 not es: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications (t j = 2 5 c, unless otherwise noted) pa ramete r s ymbol test conditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = - 250 a - 20 v v ds t emper ature coefficient ' v ds /t j i d = - 250 a - 14 mv/c v gs( t h) t emper ature coefficient ' v gs( t h) /t j 2.5 gate-s o urce threshold voltage v gs( t h) v ds = v gs , i d = - 25 0 a - 0. 4 - 1 v gate-source leakage i gss v ds = 0 v , v gs = 12 v 10 a v ds = 0 v, v gs = 4.5 v 1 zero gate voltage drain current i dss v ds = - 20 v , v gs = 0 v - 1 v ds = - 20 v , v gs = 0 v , t j = 55 c - 10 on-state drain current a i d ( on) v ds d - 5 v , v gs = - 4.5 v - 15 a drain-source on-state re sistance a r ds( o n) v gs = - 4.5 v , i d = - 4 a 0.0465 0.0650 : v gs = - 2.5 v , i d = - 4 a 0.0740 0.0900 v gs = - 1.8 v , i d = - 2 a 0.1135 0.1175 dynam ic b t o tal gate charge q g v ds = - 10 v , v gs = - 12 v , i d = - 4.5 a 23.8 36 nc v ds = - 10 v , v gs = - 4.5 v , i d = - 4. 5 a 13.8 21 gate-source charge q gs 1.9 gate- dr ain charge q gd 3 g a te resistance r g f = 1 mhz 2.2 11 22 : tu r n - o n d e l ay t i m e t d( o n) v dd = - 10 v , r l = 2.8 : i d # - 3.6 a, v gen = - 4.5 v, r g = 1 : 22 33 ns rise time t r 21 32 t urn-off delay time t d( off) 62 93 fa ll time t f 14 21 tu r n - o n d e l ay t i m e t d( o n) v dd = - 10 v , r l = 2.8 : i d # - 3.6 a, v gen = - 8 v , r g = 1 : 91 8 rise time t r 61 2 t urn-off delay time t d(off) 65 98 fa ll time t f 15 23 drain - source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1. 4 a pulse diode forward current i sm - 20 body diode v o ltage v sd i s = - 3.6 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 3.6 a, di/dt = 100 a/s , t j = 25 c 13 20 ns body diode reverse recovery charge q rr 51 0 nc reverse recovery fall time t a 8 ns re v erse recovery rise time t b 5 ' 7 6 z z z g l q w h n m s
3 typica l c haracteristics (25 c, unless otherwise noted) gate c u rrent vs. gate-source voltage output characteristics on-resistance vs. drain current 0.000 0.010 0.020 0.030 0.040 0.050 0 3 6 9 12 15 i gs s - gate current (ma) v gs - gate-source voltage (v) t j = 25 c 0 3 6 9 12 15 0 0.5 1 1.5 2 i d - dr ain current (a) v ds - d r ain-to-source voltage (v) v gs = 1.5 v v gs = 8 v thru 2 v v gs = 1 v 0 0.02 0.04 0.06 0.08 0.1 0 5 10 15 20 r ds( on ) - on- resistance () i d - dr ain current (a) v gs = 1.8 v v gs = 2.5 v v gs = 4.5 v gate c u rrent vs. gate-source voltage transfer characteristics capacitance 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 0 4 8 12 16 20 i gs s - gate current (a) v gs - g ate-to-source voltage (v) t j = 150 c t j = 2 5 c 0 0.1 0.2 0.3 0.4 0.5 0 0.35 0.7 1.05 1.4 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 2 5 c t c = 125 c t c = - 5 5 c 0 500 1000 1500 2000 0 5 10 15 20 c - capacitance (pf) v ds - d r ain-to-source voltage (v) c iss c os s c rs s dt s 2 3 1 5 www.din-tek.jp
4 ty pi cal characteristics (25 c, unless otherwise noted) gate ch ar ge single pulse power, junction-to-ambient soure-drain diode forward voltage 0 2 4 6 8 0 5 10 15 20 25 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 16 v v ds = 5 v v ds = 10 v i d = 4.5 a 0 10 20 30 0.001 0.01 0.1 1 10 100 t i me (s) po w er ( w ) 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 i s - source current (a) v sd - s ource-to-drain voltage (v) t j = 1 5 0 c t j = 2 5 c on -r esistance vs. junction temperature threshold voltage on-resistance vs. gate-to-source voltage 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 r ds( on ) - o n -resistance (normalized) t j - juncti on temperature ( c) i d = 4 a v gs = 4.5 v v gs = 2 . 5 v 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 v gs ( th) (v ) t j - tem perature ( c) i d = 250 a 0.000 0.020 0.040 0.060 0.080 0 2 4 6 8 r ds(on ) - on- resistance () v gs - gate-to-source voltage (v) t j = 1 2 5 c t j = 2 5 c i d = 4 a dt s 2 3 1 5 www.din-tek.jp
5 typica l c haracteristics 25 c, unless otherwise noted * th e power dissip ation p d is based on t j(m ax.) = 15 0 c, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient power junction-to-case 0.001 0.01 0.1 1 10 100 0.1 1 10 100 i d - d r ain current (a) v ds - drain- to-source voltage (v) * v gs > mi nimum v gs at which r ds(on ) is specified 100 ms limi ted by r ds( on) * 1 ms t a = 25 c sin gle pulse bv dss l imited 10 ms 100 s 10 s , 1 s dc 0 0.5 1 1.5 2 0 25 50 75 100 125 150 p o wer (w) t c - case temperature ( c) curr e nt derating* power junction-to-ambient 0 1.4 2.8 4.2 5.6 7 0 25 50 75 100 125 150 i d - dr ain current (a) t c - case temperature ( c) 0.0 0.2 0.4 0.5 0.7 0.9 0 25 50 75 100 125 150 p o wer (w) t a - a mbient temperature ( c) dt s 2 3 1 5 www.din-tek.jp
6 ty pi cal characteristics (25 c, unless otherwise noted) norm alized t hermal transient im pedance, junction-to-ambient 10 -3 10 -2 0001 01 1 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 d u ty c ycle = 0.5 single p u lse 0.02 0.05 0.001 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 175 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted no rmalized t hermal transient impedance, junction-to-foot 1 0.1 0.01 0.2 d u ty c ycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance single p u lse 0.1 10 -3 10 -2 1 10 -1 10 -4 0.02 0.05 dt s 2 3 1 5 www.din-tek.jp
1 sot-23 ( t o-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimet ers inches mi n max mi n max a 0 .89 1.12 0.0 35 0.044 a 1 0 .01 0.10 0.0004 0.004 a 2 0 .88 1.02 0.0 346 0.040 b 0. 35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1 .20 1.40 0.047 0.055 e 0.95 bsc 0.0 3 74 ref e 1 1.90 bsc 0.0 748 ref l 0 .40 0.60 0.016 0.024 l 1 0.6 4 ref 0. 025 ref s 0.50 ref 0.020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information www.din-tek.jp
1 application note rec ommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index r etur n to index $ s s o l f d w l r q 1 r w h www.din-tek.jp
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